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high performance, digital output gyroscope preliminary technical data ADXRS450 rev. pra information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2010 analog devices, inc. all rights reserved. features complete rate gyroscope on a single chip 300/sec angular rate sensing high vibration rejection over a wide frequency range excellent 25 /hr null offset stability internally temperature compensated 2000 g powered shock survivability spi digital output with 16-bit data-word low noise and low power 3.3 v and 5v operation ?40 c to +105 c operation ultra small, light, and rohs compliant two package options low cost soic_cav package for yaw rate (z-axis) response innovative ceramic vertical mount package, which can be oriented for pitch, roll, or yaw response applications rotation sensing medical applications rotation sensing industrial and instrumentation high performance platform stabilization general description the ADXRS450 is an angular rate sensor (gyroscope) intended for industrial, medical, instrumentation, stabilization, and other high performance applications. an advanced, differential, quad sensor design rejects the influence of linear acceleration, enabling the ADXRS450 to operate in ex ceedingly harsh environments where shock and vibration are present. the ADXRS450 utilizes an internal, continuous self-test archi- tecture. the integrity of the electromechanical system is checked by applying a high frequency electrostatic force to the sense structure to generate a rate signal that can be differentiated from the baseband rate data and internally analyzed. the ADXRS450 is capable of sensing angular rate of up to 300/sec. angular rate data is presented as a 16-bit word, as part of a 32-bit spi message. the ADXRS450 is available in a cavity plastic 16-lead soic (soic_cav) and an smt-compatible vertical mount package (lcc_v), and is capable of operating across both a wide voltage range (3.3 v to 5 v) and temperature range (?40c to +105c). functional block diagram spi interface miso mosi sclk cs high voltage generation eeprom p ss cp5 av ss v x ldo regulator p dd dv ss dv dd av dd registers/memory band-pass filter fault detection temperature calibration decimation filter alu phase locked loop clock divider demod q filter q daq p daq hv drive st control adc 12 amplitude detect 08952-001 z-axis angular rate sensor ADXRS450 figure 1.
ADXRS450 preliminary technical data rev. pra | page 2 of 28 table of contents features .............................................................................................. 1 ? applications ....................................................................................... 1 ? general description ......................................................................... 1 ? functional block diagram .............................................................. 1 ? specifications ..................................................................................... 3 ? absolute maximum ratings ............................................................ 4 ? thermal resistance ...................................................................... 4 ? rate sensitive axis ........................................................................ 4 ? esd caution .................................................................................. 4 ? pin configurations and function descriptions ........................... 5 ? typical performance characteristics ............................................. 7 ? theory of operation ........................................................................ 9 ? continuous self-test .................................................................... 9 ? applications information .............................................................. 10 ? calibrated performance ............................................................. 10 ? mechanical considerations for mounting .............................. 10 ? applications circuits ................................................................. 10 ? ADXRS450 signal chain timing ............................................. 10 ? spi communication protocol ....................................................... 12 ? command/response ................................................................... 12 ? spi communications characteristics ...................................... 13 ? spi applications .......................................................................... 14 ? spi rate data format ..................................................................... 19 ? memory map and registers .......................................................... 20 ? memory map .............................................................................. 20 ? memory register definitions ................................................... 21 ? package orientation and layout information ............................ 23 ? solder profile .............................................................................. 25 ? package marking codes ............................................................ 26 ? outline dimensions ....................................................................... 27 ? ordering guide .......................................................................... 28 ?
preliminary technical data ADXRS450 rev. pra | page 3 of 28 specifications specification conditions @ t a = t min to t max , p dd = 5 v, angular rate = 0/sec, bandwidth = 80 hz 1 g , continuous self-test on. table 1. parameter test conditions/comments symbol min typ max unit measurement range full-scale range fsr 300 400 /sec sensitivity see figure 2 nominal sensitivity 80 lsb//sec sensitivity tolerance 3 % nonlinearity 1 best fit straight line 0.05 0.25 % fsr rms cross-axis sensitivity 2 3 % null null accuracy 3 /sec noise performance rate noise density t a = 25c 0.015 /sec/hz low-pass filter cut-off (?3db) frequency f 0 /200, see figure 6 f lp 80 hz group delay 3 f = 0 hz t lp 3.25 4 4.75 ms shock and vibration immunity sensitivity to linear acceleration dc to 5 khz 0.03 /sec/g vibration rectification 0.003 /sec/ g 2 self-test see continuous self-test magnitude 2559 lsb fault register threshold compared to locst data 2239 2879 lsb sensor data status threshold compared to locst data 1279 3839 lsb frequency f 0 /32 f st 500 hz st low-pass filter ?3 db frequency f 0 /800, see figure 7 2 hz group delay 3 52 64 76 ms spi communications clock frequency 8.08 mhz voltage input high mosi, cs , sclk 0.85 p dd p dd + 0.3 v voltage input low mosi, cs sclk ?0.3 p dd 0.15 v output voltage low miso, current = 3 ma 0.5 v output voltage high miso, current = ?2 ma p dd ? 0.5 v pull up current cs , p dd = 3.3 v, cs = 0.75 p dd 50 200 a cs , p dd = 5 v, cs = 0.75 p dd 70 300 a memory registers see memory register definitions temperature sensor value at 45c 0 lsb scale factor 5 lsb/c quad, st, rate, dnc registers scale factor 80 lsb//sec power supply supply voltage p dd 3.15 5.25 v quiescent supply current i dd 6.0 10.0 ma turn-on time power on to 0.5/sec of final 100 ms temperature range independent of package type t min , t max ?40 +105 c 1 maximum limit is guaranteed through adi characterization. 2 cross-axis sensitivity specification does not include effects due to device mounting on a printed circuit board (pcb). 3 minimum and maximum limits are guaranteed by design.
ADXRS450 preliminary technical data rev. pra | page 4 of 28 absolute maximum ratings table 2. parameter rating acceleration (any axis, unpowered, 0.5 ms) 2000 g acceleration (any axis, powered, 0.5 ms) 2000 g supply voltage (p dd ) ?0.3 v to +6.0 v output short-circuit duration (any pin to ground) indefinite temperature range operating lcc_v package ?40c to +125c soic_cav package ?40c to +125c storage lcc_v package ?65c to +150c soic_cav package ?40c to +150c stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ja is specified for the worst-case conditions, that is, for a device soldered in a printed circuit board (pcb) for surface-mount packages. table 3. thermal resistance package type ja jc unit 16-lead soic_cav 191.5 25 c/w 14-lead ceramic lcc_v 185.5 23 c/w rate sensitive axis the ADXRS450 is available in two package options. the soic_cav package configuration is for applications that require a z-axis (yaw) rate sensing device. the device transmits a positive going lsb count for clockwise rotation about the axis normal to the package top. conversely, a negative going lsb count is transmitted for counterclockwise rotation about the z-zxis. the vertical mount package (lcc_v) option is for applications that require rate sensing in the axes parallel to the plane of the pcb (pitch and roll). the same principles of lsb count transmission for clockwise and counterclockwise rotation about the parallel axes apply to the lcc_v option. see figure 2 for details. rate axis longitudinal axis lateral axis vmp package + abcd g 1 1 7 7 8 ef z-axis a1 08952-002 rate axis + figure 2. rate signal increases with clockwise rotation esd caution
preliminary technical data ADXRS450 rev. pra | page 5 of 28 pin configurations and function descriptions ADXRS450 top view (not to scale) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 sclk mosi av dd dv ss rsvd av ss rsvd cp5 08952-003 dv dd rsvd rsvd miso p dd p ss vx cs figure 3. soic_cav pin configuration table 4. 14-lead soic_cav pin function descriptions pin no. mnemonic description 1 dvdd digital regulated voltage. see figure 21 for the applications circuit diagram. 2 rsvd reserved. this pin must be connected to dv ss . 3 nc reserved. this pin must be connected to dv ss . 4 cs chip select. 5 miso master in/slave out. 6 pdd supply voltage. 7 pss switching regulator ground. 8 vx high voltage switching node. see figure 21 for the applications circuit diagram. 9 cp5 high voltage supply. see figure 21 for the applications circuit diagram. 10 nc reserved. this pin must be connected to dv ss . 11 avss analog ground. 12 nc reserved. this pin must be connected to dv ss . 13 dvss digital signal ground. 14 avdd analog regulated voltage. see figure 21 for the applications circuit diagram. 15 mosi master out/slave in. 16 sclk spi clock.
ADXRS450 preliminary technical data rev. pra | page 6 of 28 1234567 14 13 12 11 10 9 8 p dd p ss mosi dv ss cs vx rsvd av ss av dd miso dv dd sclk cp5 rsvd top view (not to scale) 08952-005 figure 4. lcc_v pin configuration 1234567 back view (not to scale) nc = no connect 08952-037 cp5 rsvd sclk dv dd miso av dd av ss 141312 11 10 98 vx rsvd cs dv ss mosi p ss p dd figure 5. lcc_v pin configur ation, horizontal layout table 5. 14_lead lcc_v pin function descriptions pin no. mnemonic description 1 av ss analog ground. 2 av dd analog regulated voltage. see figure 22 for the applications circuit diagram. 3 miso master in/slave out. 4 dv dd digital regulated voltage. see figure 22 for the applications circuit diagram. 5 sclk spi clock. 6 cp5 high voltage supply. see figure 22 for the applications circuit diagram. 7 rsvd reserved. this pin must be connected to dv ss . 8 rsvd reserved. this pin must be connected to dv ss . 9 vx high voltage switching node. see figure 22 for the applications circuit diagram. 10 cs chip select. 11 dv ss digital signal ground. 12 mosi master out/slave in. 13 p ss switching regulator ground. 14 p dd supply voltage.
preliminary technical data ADXRS450 rev. pra | page 7 of 28 typical performance characteristics 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0 0.02 ?1.6 ?2.0 ?1.2 0 1.6 2.0 1.2 0.8 ?0.8 ?0.4 0.4 % of population error (/sec) 08952-006 figure 6. soic_cav null error @ 25c 0.30 0.25 0.20 0.15 0.10 0.05 0 ?3.0 % of population error (/sec) 08952-007 ?2.5 ?2.0 ?1.5 ?1.0 ?0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 figure 7. soic_cav null drift over temperature 0.25 0.20 0.15 0.10 0.05 0 ?3.0 ?2.5 ?2.0 ?1.5 ?1.0 ?0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 % of population change in sensitivity (%) 08952-008 figure 8. soic_cav sensitivity error @ 25c 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 ?2.0 ?1.6 ?1.2 ?0.8 ?0.4 0 2.01.61.20.80.4 % of population error (/sec) 08952-009 figure 9. lcc_v null error @ 25c 0.30 0.25 0.20 0.15 0.10 0.05 0 ?3.0 ?2.5 ?2.0 ?1.5 3.0 2.5 2.0 1.5 1.0 ?0.5 0 ?0.5 ?1.0 % of population error (/sec) 08952-010 figure 10. lcc_v null drift over temperature 0.25 0.20 0.15 0.10 0.05 0 ?0.030 ?0.025 ?0.020 ?0.015 ?0.010 ?0.005 0.030 0.025 0.020 0.015 0.010 0.005 0 % of population change in sensitivity (%) 08952-029 figure 11. lcc_v sensitivity error @ 25c
ADXRS450 preliminary technical data rev. pra | page 8 of 28 0.30 0.25 0.20 0.15 0.10 0.05 0 ?3 ?2 ?1 0 3 2 1 % of population drift (%) 08952-030 figure 12. soic_cav sensitivity drift over temperature 1 0.1 0.01 0.001 06 5k 4k 3k 2k 1k (g 2 /hz) vibration frequency (hz) 08952-031 k figure 13. typical response to random vibration, 15 g rms, 50 hz to 5 khz 3 2 1 0 ?1 ?2 ?3 ?50 110 9070503010 ?10 ?30 (/sec) dut temperature (c) 08952-032 n = 16 figure 14. null output over temperature, device soldered on pcb 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 % of population change in sensitivity (%) 08952-033 ?3 ?2 ?1 3 2 1 0 figure 15. lcc_v sensitivity drift over temperature 40 30 20 10 ?40 ?30 ?20 ?10 0 0.1 0.15 0.20 0.25 0.30 0.35 0.40 gyro output (/s) 60 40 50 30 20 ?20 ?10 0 10 input acceleration ( g ) time (sec) 08952-034 dut1 dut2 dut average (/s) ref figure 16. typical shock response 3 2 1 0 ?1 ?2 ?3 ?50 110 9070503010 ?10 ?30 % error dut temperature (c) 08952-035 n = 16 figure 17. sensitivity over temper ature, device soldered to pcb
preliminary technical data ADXRS450 rev. pra | page 9 of 28 theory of operation the ADXRS450 operates on the principle of a resonator gyro- scope. figure 18 shows a simplified version of one of four polysilicon sensing structures. each sensing structure contains a dither frame that is electrostatically driven to resonance. this produces the necessary velocity element to produce a coriolis force when experiencing angular rate. in the soic_cav package, the ADXRS450 is designed to sense a z-axis (yaw) angular rate; whereas the vertical mount package orients the device such that it can sense pitch or roll angular rate on the same pcb. when the sensing structure is exposed to angular rate, the resulting coriolis force couples into an outer sense frame, which contains movable fingers that are placed between fixed pickoff fingers. this forms a capacitive pickoff structure that senses coriolis motion. the resulting signal is fed to a series of gain and demodulation stages that produce the electrical rate signal output. the quad sensor design rejects linear and angular acceleration, including external g -forces and vibration. this is achieved by mechanically coupling the four sensing structures such that external g -forces appear as common-mode signals that can be removed by the fully differential architecture implemented in the ADXRS450. 08952-011 x y z figure 18. simplified gyroscope sensing structure the resonator requires 22.5 v (typical) for operation. because only 5 v is typically available in most applications, a switching regulator is included on-chip. continuous self-test the ADXRS450 gyroscope utilizes a complete electro- mechanical self test. an electrostatic force is applied to the gyroscope frame, resulting in a deflection of the capacitive sense fingers. this deflection is exactly equivalent to deflection that occurs as a result of external rate input. the output from the beam structure is processed by the same signal chain as a true rate output signal, providing complete coverage of both the electrical and mechanical components. the electromechanical self test is performed continuously during operation at a rate higher than the output bandwidth of the device. the self-test routine generates equivalent positive and negative rate deflections. this information can then be filtered with no overall effect on the demodulated rate output. rate signal with continuous self test signal. s elf test amplitude. internally compared to the specification table limits. low frequency rate information. 08952-012 figure 19. continuous self-test demodulation the difference amplitude between the positive and negative self-test deflections is filtered to 2 hz, and continuously monitored and compared to hardcoded self-test limits. if the measured amplitude exceeds these limits (listed in table 1 ), one of two error conditions is asserted depending on the magnitude of self-test error. for less severe self-test error magnitudes, the cst bit of the fault register is asserted; however, the status bits (st[1:0]) in the sensor data response remain set to 0b01 for valid sensor data. for more severe self-test errors, the cst bit of the fault register is asserted and the status bits (st[1:0]) in the sensor data response are set to 0b00 for invalid sensor data. the thresholds for both of these failure conditions are listed in table 1 . if desired, the user can access the self-test information by issuing a read command to the self-test memory register (address 0x04). see the spi communication protocol section for more information about error reporting.
ADXRS450 preliminary technical data rev. pra | page 10 of 28 applications information calibrated performance each ADXRS450 gyroscope uses internal eeprom memory to store its temperature calibration information. the calibration information is encoded into the device during factory test. the calibration data is used to perform offset, gain, and self-test corrections over temperature. by storing this information internally, it removes the burden from the customer of performing system level temperature calibration. mechanical considerations for mounting mount the ADXRS450 in a location close to a hard mounting point of the pcb to the case. mounting the ADXRS450 at an unsupported pcb location (that is, at the end of a lever, or in the middle of a trampoline), as shown in figure 20 , can result in apparent measurement errors, as the gyroscope is subject to the resonant vibration of the pcb. locating the gyroscope near a hard mounting point helps to ensure that any pcb resonances at the gyroscope are above the frequency at which harmful aliasing with the internal electronics can occur. to ensure that aliased signals do not couple into the baseband measurement range, design the module wherein the first system level resonance occurs at a frequency higher than 800 hz. mounting points pcb gyroscope 0 8952-013 figure 20. incorrectly placed gyroscope applications circuits figure 21 and figure 22 show the recommended application circuits for the ADXRS450 gyroscope. these application circuits provide a connection reference for the available package types. note that dv dd , av dd , and p dd are all individually connected to ground through 1 f capacitors; do not connect these supplies together. additionally, an external diode and inductor must be connected for proper operation of the internal shunt regulator. these components allow for the internal resonator drive voltage to reach its required level, as listed in the specifications section. table 6. component qty description inductor 1 470 h diode 1 >24 v breakdown voltage capacitor 3 1 f capacitor 1 100 nf 08952-014 11 6 dv dd rsvd rsvd cs miso p dd v x p ss sclk mosi av dd dv ss rsvd av ss cp5 rsvd 100nf 1f 1f 3.3v to 5v 1f diode >24v breakdown 470h gnd gnd gnd figure 21. recommended applications circuit, soic_cav package 08952-015 av ss av dd miso dv dd sclk cp5 rsvd p dd p ss mosi dv ss vx rsvd 1f 1f 1f 100nf 3.3 v to 5v diode >24v breakdown gnd gnd 470h g nd 11 4 top view cs figure 22. recommended applications circuit, ceramic lcc_v package ADXRS450 signal chain timing the ADXRS450 primary signal chain is shown in figure 23 . it is the series of necessary functional circuit blocks through which the rate data is generated and processed. this sequence of electro- mechanical elements determines how quickly the device is capable of translating an external rate input stimulus into an spi word to be sent to the master device. the group delay, which is a func- tion of the filter characteristic, is the time required for the output of the low-pass filter to be within 10% of the external rate input, and is seen to be ~4 ms. additional delay can be observed due to the timing of spi transactions and the population of the rate data into the internal device registers. figure 23 anatomizes this delay, wherein the delay through each element of the signal chain is presented.
preliminary technical data ADXRS450 rev. pra | page 11 of 28 the transfer function for the rate data lpf is given as 2 1 64 1 1 ? ? ? ? ? ? ? ? ? ? z z where: t = (typ)khz16 11 0 = f the transfer function for the cont inuous self-test lpf is given as 1 6364 1 ? ? z where: t = (typ)ms1 16 0 = f z-axis angular rate sensor spi transaction registers/memory band-pass filter arithmetic logic unit demod adc 12 primary signal chain <5s delay 4ms group delay <2.2ms delay <64ms group delay rate data lpf continuous self-test lpf <5s delay <5s delay 08952-016 figure 23. primary signal chain and associated delays
ADXRS450 preliminary technical data rev. pra | page 12 of 28 spi communication protocol command/response input/output is handled through a 32-bit, command/response spi interface. the command set and the format for the interface is defined as follows: clock phase = clock polarity = 0 additionally, the device response to the initial command is 0x00000001. this prevents the transmission of random data to the master device upon the initial command/response exchange. table 7. spi signals signal symbol description serial clock sclk exactly 32 clock cycles during cs active chip select cs active low master out slave in mosi data sent to the gyroscope device from the main controller master in slave out miso data sent to the main controller from the gyroscope mosi miso 32 clock cycles sclk cs command n response n ? 1 32 clock cycles command n + 1 response n 08952-017 figure 24. spi protocol table 8. spi commands command bit 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 6 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 sensor data sq1 sq0 1 sq2 chk p read 1 0 0 sm2 sm1 sm0 a8 a7 a6 a5 a4 a3 a2 a1 a0 p write 0 1 0 sm2 sm1 sm0 a8 a7 a6 a5 a4 a3 a2 a1 a0 d15 d1 4 d13 d12 d11 d10 d9 d8 d7 d6 d5 d 4 d3 d2 d1 d0 p table 9. spi responses command bit 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 sensor data sq2 sq1 sq0 p0 st1 st0 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 pll q nvm por pwr cst chk p1 read 0 1 0 p0 1 1 1 0 sm2 sm1 sm0 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 p1 write 0 0 1 p0 1 1 1 0 sm2 sm1 sm0 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 p1 r/w error 0 0 0 p0 1 1 1 0 sm2 sm1 sm0 0 0 spi re du pll q nvm por pwr cst chk p1
preliminary technical data ADXRS450 rev. pra | page 13 of 28 spi communications characteristics n ote the following conditions for tabl e 10 : ? all minimum and maximum timing values are guaranteed through characterization. ? all timing is shown with respect to 10% v dd and 90% of the actual delivered voltage waveform. ? all minimum and maximum timing values are valid for 3.0 v v dd 5.5 v. ? capacitive load for all signals is assumed to be 80 pf. ? ambient temperature is C40c t a +105c. ? miso pull-up of 47 k or 110 a. ? sequential transfer increases to 17 ms following any write operation limited by the eeprom. table 10. spi command/respons e timing characteristics symbol description min max unit f op spi operating frequency 8.08 mhz t sclkh clock (sclk) high time 1/2t sclk ? 13 ns t sclkl clock (sclk) low time 1/2t sclk ? 13 ns t sclk sclk period 123.7 ns t f clock (sclk) fall time 5.5 13 ns t r clock (sclk) rise time 5.5 13 ns t su data input (mosi) setup time 37 ns t high data input (mosi) hold time 49 ns t a data output (miso) access time 20 ns t v data output (miso) valid after sclk 20 ns t lag data output (miso) lag time tbd ns t dis data output (miso) disable time 40 ns t lead enable ( cs ) lead time 1/2t sclk ns t lag_ cs enable ( cs ) lag time 1/2t sclk ns t td sequential transfer delay 0.1 6 s f 0 gyroscope resonant frequency 13 19 khz
ADXRS450 preliminary technical data rev. pra | page 14 of 28 msb msb lsb lsb cs sck miso mosi 08952-018 t sclkh t sclkl t sclk t lead t f t a t lag t r t cs f 0 t v t dis t high t su figure 25. spi timings spi applications device data latching to allow for rapid acquisition of data from the ADXRS450, device data latching has been implemented in the design, as shown in figure 26 . upon the assertion of chip select ( cs ), the data present in the device is latched into memory. when the full mosi command has been received, and cs deasserted, the appropriate data is shifted into the spi port registers in preparation for the next sequential command/ response exchange. this allows for an exceedingly fast sequential transfer delay of 0.1 s (see ). as a design precaution, note that the transmitted data is only as recent as the sequential transmission delay implemented by the system. conditions that result in a sequential transfer delay of several seconds cause the next sequential device response to contain data that is several seconds old. table 10 32 clock cycles 32 clock cycles 32 clock cycles scl k mosi miso command n 0x? response n ? 1 0x00000001 response n 0x? response n + 1 0x? command n + 1 0x? command n + 2 0x? 0 8952-019 device data is latched after the assertion of cs. latched data is transmitted during the next sequential command/response exchange. cs figure 26. device data latching
preliminary technical data ADXRS450 rev. pra | page 15 of 28 command/responsebit definitions table 11. quick guidebit definitions for spi interface bit description sq2 to sq0 sequence bits (from master) sm2 to sm0 sensor module bits (from master) a8 to a0 register address d15 to d0 data spi spi command/response st1 to st0 status bits p command odd parity p0 response, odd parity, bits[31:16] p1 response, odd parity, bits[31:0] re request error du data unavailable sq2 to sq0 this field provides the system with a means of synchronizing the data samples that are received from multiple sensors. to facilitate correct synchronization, the ADXRS450 gyroscope includes the sq[2:0] field in the response sequence as it was received in the request. sm2 to sm0 sensor module bits from master device. these bits have not been implemented in the ADXRS450, and are hard coded to be 000 for all occurrences. a8 to a0 the a8 to a0 bits represent the memory address from which device data is being read, or to which information is to be written. these bits should only be supplied by the master when the memory registers are being accessed, and are ignored for all sensor data requests. refer to the memory register definitions section for a complete description of the available memory registers. d15 to d0 16-bit device data that can contain any of the following: ? master: data to be written to a memory register as specified in the a8 to a0 section. ? slave: sensor rate output data. ? slave: device data read from the memory register specified in the a8 to a0 section, as well as the data from the next sequential register. ? slave: for a write command, the 16-bit data that is written to the specified memory register reflects back to the master device for correlation. spi the spi bit sets when any either of the following occur: too many/not enough bits are transmitted, or the message from the control module contains a parity error. additionally, any error during a sensor data request results in the device issuing a read/write error. st1 to st0 the status bits (st1 and st0) are used to signal to the master device the type of data contained in the response message. the status bits are decoded as listed in table 12 . table 12. status bit code definitions st1:st0 content in bits[d15:d0] 00 error data for sensor data response 01 valid sensor data 10 sensor self-test data 11 read/write response there are two independent conditions that can result in the st bits being set to 0b00 during a sensor data response: self test or pll. the self test response is sufficiently different from its nominal value. refer to the specifications section for the appropriate limits. when the sensor data response is a pll, the pll fault is active. p a parity bit (p) is required for all master-to-slave data transmissions. communications protocol requires one parity bit to achieve odd parity for the entire 32-bit command. bits that are in dont care positions are still factored into the parity calculation. p0 p0 is the parity bit that establishes odd parity for bits[31:16] of the device response. p1 p1 is the parity bit that establishes odd parity for the entire 32-bit device response. re r e is the communications error bit transmitted from the ADXRS450 device to the control module. request errors can occur when ? an invalid command is sent from the control module. ? the read/write command specifies an invalid memory register. ? the write command attempted to a nonwriteable memory register. du as expressed in table 10 , the sequential transfer delay for writing data to a memory register (for example, dnc0) results in a sequential transfer delay of 17 ms. if a successive write command is issued to the device prior to the completion of the sequential transfer delay, the command is ignored and the device issues a du error response. however, a read command
ADXRS450 preliminary technical data rev. pra | page 16 of 28 or sensor data request can be issued after a sequential transfer delay of only 10 s is observed. regardless of the commands that are subsequently issued to the device, once a write procedure has been initiated, the operation proceeds through to completion (requiring 17 ms). fault register bit definitions this section describes the bits available for signaling faults to the user. the individual bits of the fault register are updated asynchronously depending on their respective detection criteria; however, it is recommended that the fault register is read at a rate of at least 250 hz. when asserted, the individual status bit does not deassert until it is read by the master device. if the error persists after a fault register read, the status bit immediately reasserts, and remains asserted until the next sequential command/response exchange. the full fault register is appended to every sensor data request. it can also be accessed by issuing a read command to register 0x0a. table 13. quick guidefault register bit definitions bit name description pll pll failure q quadrature error nvm nvm memory fault por power-on reset failed to initialize uv regulator under voltage amp amplitude detection failure pwr power regulation failed: overvoltage/undervoltage cst continuous se lf-test failure chk check: generate faults ov regulator overvoltage fail failure which sets the st[1:0] bits to 0b00 pll pll is the bit indicating that the device has had a failure in the phase locked-loop functional circuit block. this occurs when the pll has failed to achieve sync with the resonator structure. if the pll status flag is active, the st bits of the sensor data response set to 0b00, indicating that the response contains potentially invalid rate data. q a q fault can be asserted based on two independent quadrature calculations. located in the quad memory (register 0x08) is a value corresponding to the total instantaneous quadrature present in the device. if this value exceeds 4096 lsb, a q fault is issued. because quadrature build-up can contribute to an offset error, the ADXRS450 has integrated methods for dynamically cancelling the effects of quadrature. an internal quadrature accumulator records the amount of quadrature correction performed by the ADXRS450. excessive quadrature is associated with offset errors. a q fault is issued once the quadrature error present in the device has contributed to an equivalent of 4/sec (typical) of rate offset. nvm an nvm error transmits to the control module when the internal nvm data fails a checksum calculation. this check is performed once every 50 s, and does not include the dnc0 or pid memory registers. por an internal check is performed on device startup to ensure that the volatile memory of the device is functional. this is accom- plished by programming a known value from the device rom into a volatile memory register. this value is then continuously compared to the known value in rom every 1 s for the duration of the devices operation. if the value stored in the volatile memory changes, or does not match the value stored in rom, the por error flag is asserted. the value stored in rom is rewritten to the volatile memory upon a device power cycle. pwr the device performs a continuous check of the internal 3 v regulated voltage level. if either an overvoltage (ov) or under- voltage (uv) fault is asserted, then the pwr bit is also asserted. this condition occurs if the regulated voltage is observed to be either above 3.3 v or below 2.77 v. an internal low-pass filter removes high frequency glitching effects to prevent the pwr bit from asserting unnecessarily. to determine if the fault is a result of an overvoltage or undervoltage condition, the ov and uv fault bits must be analyzed. cst t he ADXRS450 is designed with continuous self-test functionality. measured self-test amplitudes are compared against the limits presented in table 1 . deviations from this value result in reported self-test errors. there are two thresholds for a self-test failure. ? self-test value > 512 lsb from nominal results in an assertion of the self-test flag in the fault register ? self-test value > 1856 lsb from nominal results in both an assertion of the self-test flag in the fault register as well as setting the st[1:0] bits to 0b00, indicating that the rate data contained in the sensor data response is potentially invalid. chk the chk bit is transmitted by the control module to the ADXRS450 as a method of generating faults. by asserting the chk bit, the device creates conditions that result in the generation of all faults represented through the fault register. for example, the self-test amplitude is deliberately altered to exceed the fault detection threshold, resulting in a self test error. in this way, the device is capable of checking both its ability to detect a fault condition, as well as its ability to report that fault to the control module.
preliminary technical data ADXRS450 rev. pra | page 17 of 28 the fault conditions are initiated nearly simultaneously; however, the timing for receiving fault codes when the chk bit is asserted is dependent upon the time required to generate each unique fault. it takes no more than 50 ms for all of the internal faults to be generated, and the fault register updated to reflect the condition of the device. until the chk bit is cleared, the status bits (st[1:0]) are set to 0b10, indicating that the data should be interpreted by the control module as self-test data. after the chk bit is deasserted, the fault conditions require an additional 50 ms to decay, and the device to return to normal operation. refer to figure 21 for the proper methodology for asserting the check bit. ov the ov fault bit asserts if the internally regulated voltage (nominally 3 v) is observed to exceed 3.3 v. this measurement is low-pass filtered to prevent artifacts such as noise spikes from asserting a fault condition. when an ov fault has occurred, the pwr fault bit is asserted simultaneously. because the ov fault bit is not transmitted as part of a sensor data request, it is recommended that the user read back the fault1 and fault0 memory registers upon the assertion of a pwr error. this allows the user to determine the specific error condition. uv the uv fault bit asserts if the internally regulated voltage (nominally 3 v) is observed to be less than 2.77 v. this measurement is low-pass filtered to prevent artifacts such as noise spikes from asserting a fault condition. when a uv fault has occurred, the pwr fault bit is asserted simultaneously. as the uv fault bit is not transmitted as part of a sensor data request, it is recommended that the user read back the fault1 and fault0 memory registers upon the assertion of a pwr error. this allows the user to determine the specific error condition. fail the fail flag is asserted when a condition arises such that the st[0:1] bits are set to 0b00. this indicates that the device has experienced a gross failure, and that the sensor data could potentially be invalid. amp the amp fault bit is asserted when the measured amplitude of the silicon resonator has been significantly reduced. this condition can occur if the voltage supplied to cp5 has fallen below the requirements of the internal voltage regulator. this fault bit is ored with the cst fault such that during a sensor data request, the cst bit position represents either an amp failure or a cst failure. the full status register can then be read from memory to validate the specific failure. k-bit assertion: recommended start-up routine the following diagram illustrates a recommended start-up routine that can be implemented by the user. alternate start-up sequences can be employed; however, ensure that the response from the ADXRS450 is handled correctly. if implemented immediately after power is applied to the device, the total time to implement the following fault detection routine is approx- imately 200 ms. as described in the device data latching section, the data present in the device upon the assertion of the cs signal is used in the next sequential command/response exchange. this results in an apparent one transaction delay before the data resulting from the assertion of the chk command is reported by the device. for all other read/write interactions with the device, no such delay exists, and the mosi command is serviced during the next sequential command/ response exchange. note that when the chk bit is deasserted, if the user tries to obtain data from the device before the cst fault flag has cleared, the device reports the data as error data.
ADXRS450 preliminary technical data rev. pra | page 18 of 28 0x2000000 0x2000000 0x2000003 0x2000000 another 50ms delay needs to be observed to allow the fault conditions to clear. if the device is functioning properly, the miso response contains all active faults, as well as having set the message format to self-test data. this is indicated through the st bits being set to 0b10. a 50ms delay is required so that the generation of faults within the device is allowed to complete. however, as the device data is latched before the chk command is asserted, the device response during this command/response exchange does not contain fault information. this response can be discarded. once the 100ms start-up time has occurred, the master device is free to assert the chk command and start the process of internal error checking. during the first command/ response exchange after power on, the ADXRS450 has been designed to issue a predefined response. power is applied to the device. wait 100ms to allow for the internal circuitry to be initialized. the fault bits of the ADXRS450 remain active until cleared. due to the required decay period for each fault condition, fault conditions remain present upon the immediate deassertion of the chk command. this results in a second sequential response in which the fault bits are asserted. again, the response is formatted as self-test data indicating that the fault bits have been set intentionally. all fault conditions are cleared, and all subsequent data exchanges need only observe the sequential transfer delay timing parameter. 0x?ff or 0x?fe (parity dependent) 0x?ff or 0x?fe (parity dependent) 0x? 0x0000001 mosi sclk cs miso 32 clock cycles 32 clock cycles 32 clock cycles 32 clock cycles 08952-020 data latch point mosi: sensor data request chk command asserted miso: standard initial response mosi: sensor data request this clears the chk bit miso: sensor data response mosi: sensor data request miso: chk response st[1:0] = 0b10 mosi: sensor data request miso: chk response st[1:0] = 0b10 xx x t = 100ms t = 150ms t = 200ms t = 200ms + t td t = 200ms + 2 t td figure 27. recommended startup sequence
preliminary technical data ADXRS450 rev. pra | page 19 of 28 spi rate data format the ADXRS450 gyroscope transmits rate data in a 16-bit format, as part of a 32-bit spi data frame. see table 9 for the full 32-bit format of the sensor data request response. the rate data is trans- mitted msb first, from d15 to d0. the data is formatted as a twos complement number, with a scale factor of 80 lsb//sec. therefore, the highest obtainable value for positive (clockwise) rotation is 0x7fff (decimal +32,767), and for counterclockwise rotation is 0x8000 (decimal ?32,768). performance of the device is not guaranteed above 24,000 lsb (300/sec). table 14. rate data 14-bit rate data data type description decimal (lsbs) hex (d15:d0) +32767 0x7fff rate data (not guaranteed) maximum possible positive data value +24000 0x5dc0 rate data +300 degrees pe r second rotation (positive fsr) +160 0x00a0 rate data +2 degrees per second rotation +80 0x0050 rate data +1 degree per second rotation +40 0x0028 rate data +1/2 degree per second rotation +20 0x0014 rate data +1/4 degree per second rotation 0 0x 0000 rate data zero rotation value ?20 0xffec rate data ?1/4 degree per second rotation ?40 0xffd8 rate data ?1/2 degree per second rotation ?80 0xffb0 rate data ?1 degree per second rotation ?160 0xff60 rate data ?2 degree per second rotation ?24000 0xa240 rate data ?300 degree per second rotation (negative fsr) ?32768 0x8000 rate data (not guaranteed) maximum possible negative data value
ADXRS450 preliminary technical data rev. pra | page 20 of 28 memory map and registers memory map the following is a list of the memory registers that are available to be read from or written to by the customer. see the previous section spi communication protocol for the proper input se- quence to read/write a specific memory register. each memory register is comprised of 8-bits of data, however, when a read request is performed, the data always returns as a 16-bit message. this is accomplished by appending the data from the next, sequential register to the memory address that was specified. data is transmitted msb first. for proper acquisition of data from the memory register, make the read request to the even numbered register address only. following the memory map ( tabl e 15 ) is the explanation of the significance of each memory register. table 15. memory register map address register name msb d6 d5 d4 d3 d2 d1 lsb 0x00 rate1 rte15 rte14 rte13 rte12 rte11 rte10 rte9 rte8 0x01 rate0 rte7 rte6 rte5 rte4 rte3 rte2 rte1 rte0 0x02 tem1 tem9 tem8 tem7 tem6 tem5 tem4 tem3 tem2 0x03 tem0 tem1 tem0 (unused) (unused) (unused) (unused) (unused) (unused) 0x04 lo cst1 lcst15 lcst14 lcst13 lcst12 lcst11 lcst10 lcst9 lcst8 0x05 lo cst0 lcst7 lcst6 lcst5 lcst4 lcst3 lcst2 lcst1 lcst0 0x06 hi cst1 hcst15 hcst14 hcst13 hcst12 hcst11 hc st10 hcst9 hcst8 0x07 hi cst0 hcst7 hcst6 hcst 5 hcst4 hcst3 hcst2 hcst1 hcst0 0x08 quad1 qad15 qad14 qad13 qad12 qad11 qad10 qad9 qad8 0x09 quad0 qad7 qad6 qad5 qad4 qad3 qad2 qad1 qad0 0x0a fault1 (unused) (unused) (unused) (unused) fail amp ov uv 0x0b fault0 pll q nvm por pwr cst chk 0 0x0c pid1 pidb15 pidb14 pidb13 pidb12 pidb11 pidb10 pidb9 pidb8 0x0d pid0 pidb7 pidb6 pidb5 pidb4 pidb3 pidb2 pidb1 pidb0 0x0e sn3 snb31 snb30 snb29 sn b28 snb27 snb26 snb25 snb24 0x0f sn2 snb23 snb22 snb21 sn b20 snb19 snb18 snb17 snb16 0x10 sn1 snb15 snb14 snb13 sn b12 snb11 snb10 snb9 snb8 0x11 sn0 snb7 snb6 snb5 sn b4 snb3 snb2 snb1 snb0 0x12 dnc1 (unused) (unused) (unused) (unused) (unused) (u nused) dncb9 dncb8 0x13 dnc0 dncb7 dncb6 dncb5 dncb4 dncb3 dncb2 dncb1 dncb0
preliminary technical data ADXRS450 rev. pra | page 21 of 28 memory register definitions the spi accessible memory registers are described in this section. as explained in the previous section, when requesting data from a memory register, only the first sequential memory address need be addressed. the data returned by the device contain 16 bits of memory register information. bits[15:8] contain the msb of the requested information, and bits[7:0] contain the lsb. rate registers addresses: 0x00 (rate1) 0x01 (rate0) register update rate: 500 hz scale factor: 80 lsb//sec the rate registers contain the temperature compensated rate output of the device filtered to 80 hz. this data can also be accessed by issuing a sensor data read request to the device. the data is presented as a 16-bit, twos complement number. msb lsb d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 temperature (temx) registers addresses: 0x02 (tem1), 0x03 (tem0) register update rate: 500 hz scale factor: 5 lsb/c the tem register contains a value corresponding to the temperature of the device. the data is presented as a 10-bit, twos complement number. 0 lsb corresponds to a temperature of approximately 45c. msb lsb d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 (unused) table 16. temperature value of tem1:tem0 45c 0000 0000 00xx xxxx 85c 0011 0010 00xx xxxx 0c 1100 0111 11xx xxxx low cst (locst) memory registers addresses: 0x04 (locst1) 0x05 (locst0) register update rate: 1000 hz scale factor: 80 lsb//sec the locst memory registers contain the value of the temperature compensated and low-pass filtered continuous self-test delta. this value is a measure of the difference between the positive and negative self-test deflections and corresponds to the values presented in table 1 . the device issues a cst error if the value of self test exceeds the established self-test limits. the self-test data is filtered to 2 hz to prevent false triggering of the cst fault bit. the data is presented as a 16-bit, twos complement number, with a scale factor of 80 lsb//sec. msb lsb d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 high cst (hicst) memory registers addresses: 0x06 (hicst1), 0x07 (hicst0) register update rate: 1000 hz scale factor: 80 lsb//sec the hicst register contains the unfiltered self-test information. the hicst data can be used to supplement fault diagnosis in safety critical applications as sudden shifts in the self-test response can be detected. however, the cst bit of the fault register is not set when the hicst data is observed to exceed the self-test limits. only the locst memory registers, which are designed to filter noise and the effects of sudden temporary self-test spiking due to external disturbances, control the assertion of the cst fault bit. the data is presented as a 16-bit, twos complement number. msb lsb d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 quad memory registers addresses: 0x08 (quad1) 0x09 (quad0) register update rate: 250 hz scale factor: 80 lsb//sec equivalent the quad memory registers contain a value corresponding to the amount of quadrature error present in the device at a given time. quadrature can be likened to a measurement of the error of the motion of the resonator structure, and can be caused by stresses and aging effects. the quadrature data is filtered to 80 hz and can be read frequently to detect sudden shifts in the level of quadrature. the data is presented as a 16-bit, twos complement number. msb lsb d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0
ADXRS450 preliminary technical data rev. pra | page 22 of 28 fault registers addresses: 0x0a (fault1) 0x0b (fault0) register update rate: not applicable scale factor: not applicable the fault register contains the state of the error flags in the device. the fault0 register is appended to the end of every device data transmission (see table 13 ); however, this register can also be accessed independently through its memory location. the individual fault bits are updated asynchronously, requiring <5 s to activate, as soon as the fault condition exists on-chip. when toggled, each fault bit remains active until the fault register is read or a sensor data command is received. if the fault is still active after the bit is read, the fault bit immediately reasserts itself. msb lsb (unused) fail amp ov uv pll q nvm por pwr st chk 0 part id (pid) registers addresses: 0x0c (pid1) 0x0d (pid0) register update rate: not applicable scale factor: not applicable the part identification registers contain a 16-bit number identifying the version of the ADXRS450. combined with the serial number, this information allows for a higher degree of device individualization and tracking. the initial product id is r01 (0x5201), with subsequent versions of silicon incrementing this value to r02, r03, and so forth. msb lsb d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 serial number (sn) registers addresses: 0x0e (sn3) 0x0f (sn2) 0x10 (sn1) 0x11 (sn0) register update rate: not applicable scale factor: not applicable the serial number registers contain a 32-bit identification number that uniquely identifies the device. to read the entire serial number, two memory read requests must be initiated. the first read request to register 0x0e returns the upper 16 bits of the serial number, and the following read request to register 0x10 returns the lower 16 bits of the serial number. msb lsb d31 d30 d29 d28 d27 d26 d25 d24 d23 d22 d21 d20 d19 d18 d17 d16 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 dynamic null correction (dnc) registers addresses: 0x12 (dnc1) 0x13 (dnc0) register update rate: not applicable scale factor: 80 lsb//sec the dynamic null correction register is the only register with write access available to the user. the user can make small adjustments to the rateout of the device by asserting these bits. this 10-bit register allows the user to adjust the static rateout of the device by up to 6.4/sec. msb lsb (unused) d9 d8 d7 d6 d5 d4 d3 d2 d1 d0
preliminary technical data ADXRS450 rev. pra | page 23 of 28 package orientation and layout information 08952-004 a d x r s 4 5 0 ( p a c k a g e f r o n t ) 1 14 8 7 figure 28. 14-lead ceramic lcc_v vertical mount 9 .462 11.232 1.27 08952-022 0.572 1.691 figure 29. sample soic_cav solder pa d layout (land pattern), dimensions shown in millimeters, not to scale 08952-024 1.55 1.5 1.5 1 1 0.80.8 1.55 0.95 0.95 0.55 0.55 0.55 2.55 5.55 2.55 figure 30. lcc_v solder pad layout, dimensions shown in millimeters, not to scale
ADXRS450 preliminary technical data rev. pra | page 24 of 28 1.50 0.50 0.90 0.80 1.50 1.00 3.10 2.70 7.70 08952-025 figure 31. sample lcc_v solder pad layout for horizontal mounting, di mensions shown in millimeters, not to scale
preliminary technical data ADXRS450 rev. pra | page 25 of 28 solder profile supplier t p t c supplier t p user t p t c user t p t c t p t l 25 t c ?5c t s t smin t smax preheat area maximum ramp-up rate = 3c/sec maximum ramp-down rate = 6c/sec 08952-026 time 25c to peak t p t c ?5c t l temperature time figure 32. recommended soldering profile conditions profile feature sn63/pb37 pb-free average ramp rate (t l to t p ) 3c/sec maximum preheat minimum temperature (t smin ) 100c 150c maximum temperature (t smax ) 150c 200c time (t smin to t smax ) (t s ) 60 sec to 120 sec 60 sec to 120 sec t smax to t l ramp-up rate 3c/sec maximum time maintained above liquidous (t l ) liquidous temperature (t l ) 183c 217c time (t l ) 60 sec to 150 sec 60 sec to 150 sec peak temperature (t p ) 240c + 0c/?5c 260c + 0c/?5c time within 5c of actual peak temperature (t p ) 10 sec to 30 sec 20 sec to 40 sec ramp-down rate 6c/sec maximum time 25c to peak temperature 6 minutes maximum 8 minutes maximum
ADXRS450 preliminary technical data rev. pra | page 26 of 28 package marking codes xrs450 beyz n #yyww lllllllll xrs450 brgz n #yyww lllllllll 08952-027 figure 33. lcc_v and soic_cav package marking codes table 17. package code designations marking significance xrs angular rate sensor 450 series number b temperature grade (?40c to +105c) rg package designator (soic_cav package) ey package designator (lcc_v package) z rohs compliant n revision number # pb-free designation yyww assembly date code lllllllll assembly lot code (up to 9 characters)
preliminary technical data ADXRS450 rev. pra | page 27 of 28 outline dimensions 072409-b 16 1 8 9 3.73 3.58 3.43 0.28 0.18 0.08 0.75 0.70 0.65 0.58 0.48 0.38 0.87 0.77 0.67 1.50 1.35 1.20 10.30 bsc 9.59 bsc 1.27 bsc 10.42 bsc 7.80 bsc 0.25 gage plane detail a detail a 8 4 0 c oplanarity 0.10 0.50 0.45 0.40 pin 1 indicator figure 34. 16-lead small outline, plastic cavity package [soic_cav] (rg-16-1) dimensions shown in millimeters 04-08-2010-a 1234567 1 23 45 6 7 14 13 12 11 10 9 8 9.20 9.00 sq 8.80 7.18 7.10 7.02 8.08 8.00 7.92 0.350 0.305 0.260 4.40 4.00 3.60 7.70 7.55 7.40 0.275 ref 1.175 ref 0.675 nom 0.500 min 0.50 typ 0.30 ref 0.30 ref c0.30 ref 1.70 ref (all pins) 1.70 ref (all pins) 1.00 (pins 2, 6) 1.40 (pins 1, 7, 8, 14) 0.60 (pins 3-5) 1.60 (pins 1, 7) 0.40 (pins 3-5, 10-12) 0.80 (pins 2, 6, 9, 13) 0.80 ref (metallization bump bump height 0.03 nom) bottom view (pads side) front v iew side view back view 0.35 ref 0.35 ref 89 10 11 12 13 14 r0.20 ref 1.50 (pins 2, 6) 1.00 (pins 9-10, 12-13) 0.80 (pins 10, 11, 12) do not solder center pads. figure 35. 14-terminal ceramic leadless chip carrier [lcc_v] (ey-14-1) dimensions shown in millimeters
ADXRS450 preliminary technical data rev. pra | page 28 of 28 ordering guide model 1 temperature range package description package option ADXRS450brgz C40c to +105c 16-lead soic_cav rg-16-1 ADXRS450brgz-rl C40c to +105c 16-lead soic_cav rg-16-1 ADXRS450beyz C40c to +105c 14-terminal lcc_v ey-14-1 ADXRS450beyz-rl C40c to +105c 14-lead lcc lcc_14 eval-ADXRS450z evaluation board eval-ADXRS450z-m analog devices inertial sensor evaluation system, includes ADXRS450 satellite eval-ADXRS450z-s ADXRS450 satellite, standalone 1 z = rohs compliant part. ?2010 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. p r 08952-0-4/10(pra)

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